IC Resources Ltd

SiC Epitaxy Process Development Engineer

Location
Austria
Salary
Attractive salary + Benefits
Posted
07 Jul 2017
Closes
04 Aug 2017
Ref
J41605
Contact
Rachel Anderson
Specialist Area
Semiconductors
Contract Type
Permanent
Hours
Full Time
SiC Epitaxy Process Development Engineer
Austria
Attractive salary + Benefits

Our international client is currently searching for a SiC Epitaxy Process Development Engineer to be responsible for process development and characterization.

The role will involve working with the device development team as well as transitioning processes to full production.

Required experience for the Silicon Carbide Process Engineer is as follows:

-Strong SiC knowledge and experience
-Epitaxy process experience
- Crystal growth experience beneficial
-Excellent communication skills
-Engineering Degree in Electronic Engineering / Physics or equivalent

Please call to discuss further

A number of the following key skills will be necessary for the role: IC, semiconductor, SiC, silicon carbide, engineer, process, development, crystal growth, Halbleiter, manufacturing, Austria, jobs

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