IC Resources Ltd

Senior GaN Development Engineer - Singapore

Location
Singapore
Salary
Negotiable
Posted
23 Sep 2016
Closes
21 Oct 2016
Ref
J37028
Contact
Rachel Anderson
Specialist Area
Semiconductors
Contract Type
Permanent
Hours
Full Time
IGSS
Senior GaN Development Engineer - Singapore


Our innovative client is now searching for a Senior GaN Development Engineer to be responsible for leading the development of GaN HEMT device development. Evaluation and optimization of devices will be part of the role as well as working in close collaboration with wafer process engineering and the design team.

Required skills for the Gallium Nitride Development Engineer will include;

-Strong GaN HEMT power device knowledge
-Evaluation/Characterisation experience
-Experience of working within a high volume manufacturing area
-Excellent communications skills
-BSc Degree in Electrical Engineering/Physics or related discipline

Please call us to discuss further.


A number of the following key skills will be required for the role IC, semiconductor, GaN, gallium nitride, HEMT, device, power, engineer, manufacturing, Singapore, and jobs