IC Resources Ltd

GaN Expert - MOCVD Epitaxy Process Development - Austria

5 days left

Location
Austria
Salary
Rewarding salary + benefits
Posted
03 Sep 2016
Closes
01 Oct 2016
Ref
J32816
Contact
Rachel Anderson
Specialist Area
Semiconductors
Contract Type
Permanent
Hours
Full Time
GaN Expert - MOCVD Epitaxy Process Development - Austria

Our international client is now searching for a GaN Expert to be responsible for the process development of new power devices. The role will involve designing device and process concepts as well as assisting in project management across the departmental teams.

Required skills for the Gallium Nitride Expert will include the following;

-Strong GaN on Silicon epitaxy experience
-MOCVD process experience
-Excellent semiconductor manufacturing background
-Strong communication skills (English)
-BSc in Physics / Electrical Engineering or equivalent

Please call us to discuss further.

Key skills are following: Semiconductor, GaN, III-V, MOCVD, epitaxy, silicon, engineer, manufacturing, power, R&D, Halbleiter, Austria, jobs

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